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STP26N60DM6

Part No STP26N60DM6
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 18A TO220
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 37 Weeks
Features N-Channel 600 V 18A (Tc) 130W (Tc) Through Hole TO-220
Manufacturer STMicroelectronics
Series MDmesh™ DM6
Package Tube
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Through Hole
Package TO-220-3
Case / Package TO-220
Family Name STP26
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 350
Popularity High
Supply and Demand Status Balance
Win Source Part Number 935553-STP26N60DM6
Ultra Librarian 3D Model Ultra Librarian STP26N60DM6 CAD Model

Description

STP26N60DM6 - N-channel MOSFET by STMicroelectronics

The STP26N60DM6 is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a global semiconductor leader known for its advanced and integrated technology solutions. This MOSFET is part of the MDmesh™ DM6 series, which is renowned for its excellent energy efficiency and high power density. The STP26N60DM6 is designed to meet the rigorous demands of modern electronic circuits, providing a combination of low on-resistance and high switching speed.

With a 600V drain-source breakdown voltage, the STP26N60DM6 is suitable for high voltage applications, including switch-mode power supplies (SMPS), lighting, welding, and other power conversion systems. Its robust structure ensures reliability and longevity, making it an ideal choice for both industrial and consumer electronics.

The device boasts a low gate charge (Qg), which facilitates faster switching and helps to reduce switching losses. This feature, along with the low on-state resistance (Rds(on)), contributes to the MOSFET's overall high efficiency, making it an excellent choice for power applications where energy savings are critical.

The STP26N60DM6 also features Zener-protected gate, providing enhanced protection against overvoltage and ensuring stable operation even under harsh conditions. This built-in protection mechanism makes the device more resilient and reduces the need for external components, simplifying circuit design and saving board space.

Available in a TO-220 package, the STP26N60DM6 offers excellent thermal performance and is easy to mount on a variety of heat sinks for effective heat dissipation. Its package is designed to handle high current and power levels without compromising the MOSFET's performance or reliability.

Whether you are designing power management systems, inverters, or any other application that requires high voltage and power efficiency, the STP26N60DM6 from STMicroelectronics is a solid choice that combines the latest semiconductor technology with robust design to deliver outstanding performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $7.3771 $51.6397
17+ $6.0530 $102.9010
26+ $5.8639 $152.4614
36+ $5.6747 $204.2892
46+ $5.4856 $252.3376
61+ $4.9181 $300.0041
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,360 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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