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STP35N65M5

Part No STP35N65M5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 27A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 83nC @ 10V
Max Input Capacitance 3750pF @ 100V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 160W (Tc)
Maximum Rds On at Id,Vgs 98 mOhm @ 13.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1103683-STP35N65M5
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian STP35N65M5 CAD Model

Description

STP35N65M5 - N-channel 650 V, 0.084 Ω typ., 34 A MDmesh™ M5 Power MOSFET in TO-220 Package

The STP35N65M5 is a high-performance N-channel Power MOSFET presented by STMicroelectronics, which is a part of their MDmesh™ M5 series. This device is designed to meet the stringent requirements of modern power electronic systems, providing high efficiency and reliability for a wide range of applications including switch-mode power supplies (SMPS), lighting, welding, solar inverters, and other high-performance power conversion applications.

With a 650V breakdown voltage, this MOSFET is well-suited for high voltage applications that require a robust and efficient switching performance. The low on-resistance (0.084 Ω typ.) minimizes conduction losses, while the high current rating (34 A) allows for substantial power handling capabilities.

Constructed with the advanced MDmesh™ M5 technology, the STP35N65M5 offers an excellent figure of merit (RDS(on) * area), which enhances the overall efficiency of power systems by reducing switching and conduction losses. This technology is especially beneficial in applications that demand high efficiency, such as energy-saving power supplies and inverters.

The device comes in a robust TO-220 package, which is widely used in the industry and appreciated for its ease of installation and heat dissipation properties. The TO-220 package ensures that the STP35N65M5 can operate reliably even under high thermal and electrical stresses.

Key features of the STP35N65M5 include:

  • Max RDS(on) of 0.084 Ω at VGS = 10 V
  • Continuous drain current (ID) of 34 A at 25°C
  • Low gate charge (Qg) for faster switching
  • 100% avalanche tested, guaranteeing good ruggedness
  • High dv/dt capability

STMicroelectronics ensures that the STP35N65M5 meets the highest quality and performance standards, making it a reliable choice for designers looking to create efficient and durable power systems. The combination of its advanced technology, electrical characteristics, and package design makes the STP35N65M5 a versatile component for a multitude of high voltage applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $6.4192 $57.7728
22+ $5.2670 $115.8740
34+ $5.1023 $173.4782
47+ $4.9378 $232.0766
61+ $4.7732 $291.1652
81+ $4.2794 $346.6314
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 26,400 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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