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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series Automotive, AEC-Q101, DeepGATE™, STripFET™ VI
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.8mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 340 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 17930 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Base Product Number STP360
Other Names -1138-STP360N4F6,497-13972-5,STP360N4F6,2266-STP360N4F6
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278165-STP360N4F6
Ultra Librarian 3D Model Ultra Librarian STP360N4F6 CAD Model

Description

The STP360N4F6 is a robust, high-performance N-channel MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This power MOSFET is designed to meet the demanding requirements of modern electronic applications, offering an optimal balance between on-resistance and switching performance, which makes it suitable for a wide range of power management tasks.

Key Features

  • Low On-Resistance: The device features an exceptionally low on-resistance (R<sub>DS(on)), which enhances its efficiency by minimizing conduction losses. This is particularly beneficial in applications where high current handling is essential.
  • High Current Capability: With a continuous drain current (I<sub>D) rating, the STP360N4F6 can handle significant amounts of power, making it an excellent choice for high-power applications.
  • High Switching Speed: The fast switching speed of the STP360N4F6 MOSFET ensures efficient operation at high frequencies, which is crucial for reducing switching losses in power conversion systems.
  • Enhanced Thermal Performance: The MOSFET is encapsulated in a TO-220 package, which is known for its excellent thermal characteristics. This ensures that the device can operate reliably even under high temperature conditions.
  • 100% Avalanche Tested: Guarantees robustness and reliability by ensuring that each unit can withstand high-energy pulses in the avalanche and commutation mode.

Applications

The STP360N4F6 is a versatile component suitable for a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • DC-DC converters
  • Motor control circuits
  • Automotive applications
  • Power management functions in computing and telecom systems

Quality and Reliability

STMicroelectronics is committed to delivering high-quality products. The STP360N4F6 MOSFET is manufactured with the latest technology and rigorous quality control processes, ensuring both performance and reliability for critical applications. With its advanced features and robust design, the STP360N4F6 is a prime choice for designers looking to optimize their power management systems.

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