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STP4NK60ZFP

Part No STP4NK60ZFP
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 4A TO-220FP / Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-220FP Tube
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 50μA
Max Gate Charge 26nC @ 10V
Max Input Capacitance 510pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 25W (Tc)
Maximum Rds On at Id,Vgs 2 Ohm @ 2A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 094003-STP4NK60ZFP
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name STP4NK60
Introduction Date June 20, 2002
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian STP4NK60ZFP CAD Model

Description

STP4NK60ZFP - N-Channel 600V - 1.2 Ohm - 4A TO-220FP Zener-Protected SuperMESH™ Power MOSFET

The STP4NK60ZFP is a high voltage MOSFET designed to deliver the best in class performance for efficiency and reliability in a wide range of applications. Manufactured by STMicroelectronics, a leader in semiconductor solutions, this power MOSFET is part of the SuperMESH™ series, which is well-known for its extremely low on-resistance, high dv/dt capability, and fast switching speed.

This particular MOSFET features a drain-source voltage (VDS) of 600V, which makes it suitable for high voltage applications such as switching power supplies, lighting, motor control, and inverter circuits. Its low threshold voltage ensures ease of drive and its Zener-protected design provides exceptional ruggedness and reliability.

The STP4NK60ZFP has an on-resistance (RDS(on)) of 1.2 ohms and a continuous drain current (ID) of 4A, which allows for efficient power management and minimizes losses during operation, leading to energy savings. The TO-220FP package is designed to offer a high level of heat dissipation, ensuring stable performance even under high current and temperature conditions.

Key Features:

  • High breakdown voltage of 600V to withstand high voltage stresses
  • Low gate charge and low crss for fast switching
  • Improved dv/dt capability for reliability in harsh environments
  • Zener-protected gate for enhanced ruggedness
  • Very low intrinsic capacitances for high-speed switching
  • 100% avalanche tested to guarantee optimal quality and reliability

Applications:

  • Switch Mode Power Supplies (SMPS)
  • High Efficiency DC-DC Converters
  • Power Factor Correction (PFC) circuits
  • Electronic Ballasts for lighting
  • Motor Control and Inverters

The STP4NK60ZFP MOSFET is a testament to STMicroelectronics' commitment to providing power solutions that offer a perfect balance between efficiency and robustness. Its advanced technology ensures that it is a preferred choice for designers who require a reliable and high-performing MOSFET for their demanding applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
170+ $0.2948 $50.1160
365+ $0.2762 $100.8130
565+ $0.2668 $150.7420
810+ $0.2482 $201.0420
1,050+ $0.2389 $250.8450
1,310+ $0.2295 $300.6450
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 65,000 pieces
MOQ: 170 pcs
Order Increment : 1 pcs
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