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STP7N52K3

Part No STP7N52K3
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 525V 6A TO220AB / N-Channel 525 V 6A (Tc) 90W (Tc) Through Hole TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series SuperMESH3™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 525 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 980mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 737 pF @ 100 V
Power Dissipation (Max) 90W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Base Product Number STP7N
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-9094-5,-497-9094-5,1805-STP7N52K3
Standard Package 50
Win Source Part Number 1225085-STP7N52K3
Ultra Librarian 3D Model Ultra Librarian STP7N52K3 CAD Model

Description

The STP7N52K3 is a cutting-edge N-channel Power MOSFET from STMicroelectronics, designed to deliver high efficiency and reliability for a wide range of applications. This MOSFET is part of the SuperMESH™3 series, which is renowned for its excellent performance in high-voltage power conversion tasks.

Key Features

  • High Voltage Rating: With a drain-source voltage (VDS) of 525 V, the STP7N52K3 is suitable for high voltage applications, ensuring robust performance under various operating conditions.
  • Low On-Resistance: The device boasts a low on-resistance (RDS(on)) of just 6.7 Ω typical, which translates to reduced conduction losses and improved overall efficiency.
  • High Current Capability: With a continuous drain current (ID) of 7 A, this MOSFET can handle significant power levels, making it ideal for demanding power supply and switching applications.
  • Improved Gate Charge: The optimized gate charge (Qg) allows for faster switching speeds, which is essential for reducing switching losses in power conversion systems.
  • 100% Avalanche Tested: Each unit is thoroughly tested for avalanche ruggedness, ensuring reliability and robustness in applications where the MOSFET may be subjected to high-energy pulses.

Applications

The STP7N52K3 is designed for use in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting applications
  • High-efficiency DC-DC converters
  • Power factor correction circuits
  • Motor control circuits

Package Information

The STP7N52K3 is housed in a TO-220 package, which is a widely used and robust package type. This package provides good thermal and electrical characteristics, ensuring the MOSFET can operate effectively even under high power and temperature conditions.

Conclusion

Overall, the STP7N52K3 from STMicroelectronics is a highly capable and reliable component for designers looking to optimize their high-voltage power management systems. Its combination of high voltage capability, low on-resistance, and high current handling makes it a strong choice for efficiency-critical applications.

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