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STP80NF55-06

Part No STP80NF55-06
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 80A TO-220 / Trans MOSFET N-CH 55V 80A 3-Pin(3+Tab) TO-220AB Tube
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 189nC @ 10V
Max Input Capacitance 4400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 40A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 026358-STP80NF55-06
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Application Field Used in Industrial
Family Name STP80NF55-06
Introduction Date July 21, 1999
ECCN EAR99
Country of Origin China, Morocco
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian STP80NF55-06 CAD Model

Description

STP80NF55-06 - N-Channel MOSFET

The STP80NF55-06 is a high-performance N-Channel MOSFET produced by STMicroelectronics, a global semiconductor leader known for their cutting-edge technology and reliable electronic components. This MOSFET is part of ST's STripFET™ II Power MOSFET series, which is renowned for its low gate charge, reduced on-resistance, and exceptional switching performance.

With a 55V drain-source voltage (VDS) and an impressive 80A continuous drain current (ID), the STP80NF55-06 is designed to handle high-power applications and challenging environments. Its low threshold voltage ensures that the device can be driven at lower voltages, making it suitable for a variety of applications including DC-DC converters, motor control circuits, and power management systems.

The device boasts a low on-resistance (RDS(on)) of only 8.0 mΩ, which translates into reduced conduction losses and improved overall efficiency. This is particularly important in applications where energy conservation and heat management are critical. Additionally, the STP80NF55-06 features a robust and fast-switching capability, thanks to its low gate charge (Qg) and low input capacitance (Ciss), which result in reduced switching losses and faster response times.

Enclosed in a TO-220 package, the STP80NF55-06 is designed for through-hole mounting, which provides strong mechanical anchorage and ease of heat sinking for thermal management. The device also includes an intrinsic diode, which offers fast recovery and reverse voltage protection, making it a versatile choice for synchronous rectification in SMPS, high-efficiency DC-DC converters, and other power-related applications.

As a testament to its reliability and performance, the STP80NF55-06 is compliant with RoHS and adheres to STMicroelectronics' commitment to environmental sustainability. Engineers and designers looking for a robust power MOSFET that can deliver high efficiency and power density without compromising on performance will find the STP80NF55-06 to be an excellent choice.

For detailed specifications, application notes, and additional resources, customers can visit the STMicroelectronics website or contact their local ST sales office.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8768 $65.6880
80+ $1.5400 $123.2000
120+ $1.4918 $179.0160
160+ $1.4438 $231.0080
210+ $1.3956 $293.0760
280+ $1.2513 $350.3640
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 53,200 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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