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STPSC8H065DLF

Part No STPSC8H065DLF
Manufacturer STMicroelectronics
Catalog Diodes, Rectifiers - Single
Description DIODE SIL CARB 650V 8A POWERFLAT / Diode 650 V 8A Surface Mount PowerFlat™ (8x8) HV
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes
Mfr STMicroelectronics
Series ECOPACK®2
Package Tape & Reel
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 8A
Voltage - Forward (Vf) (Max) @ If 1.55 V @ 8 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 80 µA @ 650 V
Capacitance @ Vr, F 460pF @ 0V, 1MHz
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Supplier Device Package PowerFlat™ (8x8) HV
Operating Temperature - Junction -40°C ~ 175°C
Base Product Number STPSC8
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 1337225-STPSC8H065DLF
Ultra Librarian 3D Model Ultra Librarian STPSC8H065DLF CAD Model

Description

STPSC8H065DLF - Silicon Carbide Power Schottky Diode

The STPSC8H065DLF from STMicroelectronics is a state-of-the-art Silicon Carbide Power Schottky Diode that offers superior performance in power electronics systems. Designed to operate at high voltages and currents, this diode ensures efficiency and reliability in a variety of applications such as power supplies, inverters, and motor drives.

Key Features:

  • Voltage Rating: The STPSC8H065DLF has a high forward voltage rating of 650V, making it suitable for high-voltage applications.
  • Current Capacity: This diode can handle a continuous forward current of up to 8A, with the ability to manage higher surge currents, ensuring robust performance under demanding conditions.
  • Low Forward Voltage Drop: The device boasts a low forward voltage drop, which enhances power efficiency by reducing conduction losses.
  • High Switching Speed: With its fast-switching capabilities, the STPSC8H065DLF minimizes switching losses and enables high-frequency operation.
  • Temperature Resilience: The diode operates effectively over a wide temperature range, ensuring stability and reliability in extreme conditions.
  • Zero Reverse Recovery Charge: The absence of reverse recovery charge in this Silicon Carbide diode translates to reduced switching losses and lower electromagnetic interference (EMI).

Benefits:

The STPSC8H065DLF is engineered to maximize efficiency in power conversion systems. Its low forward voltage drop and high switching speed result in reduced power losses, which can lead to smaller heatsink requirements and a more compact system design. Additionally, the diode's robustness against high temperatures and surge currents enhances system reliability and extends the lifespan of the overall application.

Applications:

  • Switch Mode Power Supplies (SMPS)
  • Power Factor Correction (PFC) circuits
  • High-frequency converters and inverters
  • Electric vehicle (EV) charging stations
  • Photovoltaic (solar) inverters
  • Uninterruptible Power Supplies (UPS)

The STPSC8H065DLF is a cutting-edge solution for designers looking to improve the performance and efficiency of their power conversion systems. With its advanced Silicon Carbide technology, this diode is an ideal choice for high-voltage and high-power applications where efficiency and reliability are paramount.

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $4.7749 $52.5239
26+ $3.9179 $101.8654
40+ $3.7955 $151.8200
55+ $3.6730 $202.0150
71+ $3.5506 $252.0926
95+ $3.1833 $302.4135
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 726 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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