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STQ1NC45R-AP

Part No STQ1NC45R-AP
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 450V 0.5A TO-92
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging AMMO PACKAGE
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 450V
Continuous Drain Current at 25°C 500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.7V @ 250μA
Max Gate Charge 7nC @ 10V
Max Input Capacitance 160pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3.1W (Tc)
Maximum Rds On at Id,Vgs 4.5 Ohm @ 500mA, 10V
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-92-3
Dimension TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Win Source Part Number 038709-STQ1NC45R-AP
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian STQ1NC45R-AP CAD Model

Description

The STQ1NC45R-AP is a high-performance N-channel Power MOSFET from the renowned semiconductor manufacturer, STMicroelectronics. This device is designed to deliver efficient power management and conversion in a wide array of applications. The STQ1NC45R-AP is a testament to STMicroelectronics' commitment to providing innovative solutions for managing power in electronic circuits.

Key Features

  • Low Threshold Drive: The low gate threshold voltage of the STQ1NC45R-AP allows for easy drive from logic level circuits, making it ideal for low voltage applications where power efficiency is critical.
  • High Switching Speed: With its fast switching capabilities, this MOSFET is suitable for high-frequency power switching applications, which is essential for minimizing energy losses during power conversion.
  • Enhanced Durability: The robust design ensures a high level of reliability and longevity, even under stressful conditions, contributing to the overall durability of the end product.
  • RDS(on) Optimization: The STQ1NC45R-AP features a low on-state resistance (RDS(on)), which reduces conduction losses and improves overall efficiency, particularly in high current applications.

Applications

The versatility of the STQ1NC45R-AP makes it suitable for a broad range of applications. It is particularly well-suited for:

  • Switch Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Motor Control Drivers
  • LED Lighting Solutions
  • High-Efficiency Power Management Systems

Product Specifications

Parameter Value
Drain-source Voltage (VDS) 450V
Continuous Drain Current (ID) 1A
Power Dissipation (PD) 35W
Operating Temperature Range -55°C to 150°C
Package TO-92

In summary, the STQ1NC45R-AP from STMicroelectronics is an excellent choice for designers looking for a high-efficiency, reliable N-channel Power MOSFET. Its low threshold voltage, high-speed switching, and low RDS(on) make it an indispensable component for modern electronic applications requiring efficient power management.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9287 $51.0785
135+ $0.7620 $102.8700
205+ $0.7382 $151.3310
280+ $0.7144 $200.0320
365+ $0.6906 $252.0690
485+ $0.6191 $300.2635
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 29,600 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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