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STS20N3LLH6

Part No STS20N3LLH6
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 20A 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 17nC @ 4.5V
Max Input Capacitance 1690pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.7W (Tc)
Maximum Rds On at Id,Vgs 4.7 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1103880-STS20N3LLH6
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Computers & Computer Peripherals, Power Management, Communications & Networking
Ultra Librarian 3D Model Ultra Librarian STS20N3LLH6 CAD Model

Description

Introducing the STS20N3LLH6 Power MOSFET by STMicroelectronics

The STS20N3LLH6 is a state-of-the-art N-channel Power MOSFET designed and manufactured by the renowned semiconductor company, STMicroelectronics. This advanced power management component is well-suited for a wide range of applications, particularly in the realm of high-efficiency power conversion and switching. The device is built using STMicroelectronics' innovative STripFET™ VI DeepGATE™ technology, which ensures optimal performance in terms of low on-resistance and minimal gate charge, leading to superior power efficiency and thermal performance.

With its low threshold drive, the STS20N3LLH6 is capable of operating at lower gate voltages, thereby reducing power losses and improving the overall efficiency of the system it is integrated into. This feature makes it an excellent choice for applications such as DC-DC converters, motor control circuits, and power management solutions across various electronic devices.

The device boasts a maximum continuous drain current (I<sub>D) of 20 A, which allows it to handle significant power without compromising on performance. The STS20N3LLH6 operates at a maximum drain-source voltage (V<sub>DS) of 30V, providing a good balance between the voltage handling capability and the size of the device. Furthermore, its low gate charge (Q<sub>g) enhances the switching performance, which is crucial in high-frequency power switching applications.

Engineered for robustness, the STS20N3LLH6 features an integrated ESD protection, which shields the device from electrostatic discharges that can potentially cause damage during handling or operation. This MOSFET comes in a compact and surface-mountable PowerFLAT 5x6 package, which not only reduces the PCB space requirement but also aids in achieving excellent thermal dissipation, ensuring reliability even under high operating temperatures.

To summarize, the STS20N3LLH6 from STMicroelectronics is a high-performance, efficiency-focused Power MOSFET that offers designers a compact, robust, and energy-efficient solution for their power management needs. With its advanced features and cutting-edge technology, this MOSFET is poised to enhance the performance of a wide array of electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9674 $58.0440
150+ $0.7939 $119.0850
230+ $0.7690 $176.8700
315+ $0.7443 $234.4545
405+ $0.7195 $291.3975
540+ $0.6450 $348.3000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,781 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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