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Same model may have multiple batches, images only for reference.
IXTH60N20L2 Real Image
Same model may have multiple batches, images only for reference.

IXTH60N20L2

Part No IXTH60N20L2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 60A TO-247
Datasheet
IXTH60N20L2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 255nC @ 10V
Max Input Capacitance 10500pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 540W (Tc)
Maximum Rds On at Id,Vgs 45 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 (IXTH)
Dimension TO-247-3
Win Source Part Number 1049822-IXTH60N20L2
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTH60N20L2 CAD Model

Description

The IXYS MOSFET is a high-performance N-channel power transistor designed for use in a wide range of applications.

  • Maximum Power Dissipation: 540W (Tc)
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 60A (Tc)
  • Maximum Rds On: 45 mOhm @ 30A, 10V
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Gate Charge: 255nC @ 10V
  • Package: TO-247 (IXTH)

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7+ $17.2804 $120.9628
11+ $16.7403 $184.1433
15+ $16.2004 $243.0060
19+ $15.6603 $297.5457
25+ $14.0403 $351.0075
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Availability: 4,600 pieces
MOQ: 3 pcs
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