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STU11NM60ND

Part No STU11NM60ND
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series FDmesh™ II
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 450mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 850 pF @ 50 V
Power Dissipation (Max) 90W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number STU11N
Standard Package 75
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278129-STU11NM60ND
Ultra Librarian 3D Model Ultra Librarian STU11NM60ND CAD Model

Description

STU11NM60ND - Power MOSFET by STMicroelectronics

The STU11NM60ND is a high-performance N-channel power MOSFET manufactured by STMicroelectronics, a global semiconductor leader known for its cutting-edge technology and innovation. This MOSFET is part of the MDmesh™ series, which is designed to offer extremely low on-resistance (R<sub>DS(on)) and gate charge (Q<sub>g) to ensure high efficiency in a wide range of applications.

With a drain-source voltage (V<sub>DS) of 600V, the STU11NM60ND is optimized for high voltage switching applications. Its maximum continuous drain current (I<sub>D) of 11A allows it to handle significant power without overheating, thanks to its excellent thermal performance. The low threshold voltage (V<sub>GS(th)) ensures that the device can be driven at lower voltages, making it suitable for a variety of control applications.

This power MOSFET incorporates STMicroelectronics' proprietary strip layout with an improved vertical structure, which enhances the current carrying capability while reducing leakage currents and switching losses. The result is a product that offers high reliability and efficiency, making it ideal for power supply units, lighting applications, motor control circuits, and other high-efficiency power conversion systems.

The STU11NM60ND comes in a TO-251 (IPAK) package, which provides a compact footprint while still offering good thermal performance for better heat dissipation. This packaging makes the MOSFET easy to integrate into various circuit designs, providing designers with flexibility and convenience.

Key features of the STU11NM60ND include:

  • Low threshold voltage for easy drive
  • High dv/dt and avalanche capabilities
  • 100% avalanche tested
  • Zener-protected

The STU11NM60ND, with its robust design and superior electrical characteristics, is a testament to STMicroelectronics' commitment to providing high-quality components that meet the needs of modern electronic systems. Its performance and reliability make it an excellent choice for designers looking to optimize their power management solutions.

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