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STU3N62K3

Part No STU3N62K3
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 620V 2.7A 3-Pin(3+Tab) IPAK Tube / MOSFET N-CH 620V 2.7A IPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 620V
Continuous Drain Current at 25°C 2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 50μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 385pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 2.5 Ohm @ 1.4A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 054395-STU3N62K3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name STU3N62K3
Introduction Date July 10, 2008
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2025
Ultra Librarian 3D Model Ultra Librarian STU3N62K3 CAD Model

Description

The STU3N62K3 is a high-performance N-Channel MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This MOSFET is designed to deliver high efficiency and power density for a wide range of applications, making it an ideal choice for designers looking to optimize their power management systems.

Key Features:

  • Drain-source Voltage (V<sub>DS): The STU3N62K3 has a drain-source voltage of 620V, providing a high voltage rating suitable for various applications, including high-efficiency converters and power supplies.
  • Continuous Drain Current (I<sub>D): It offers a continuous drain current of 3A, which allows for significant power handling capability in a compact form factor.
  • Low On-Resistance (R<sub>DS(on)): This MOSFET features a low on-resistance of 1.2 Ohm (typical), reducing conduction losses and improving overall efficiency.
  • Fast Switching Speed: The fast switching speed of the STU3N62K3 enhances performance in switching applications, contributing to energy savings and reduced heat generation.
  • High Avalanche Ruggedness: This device is engineered to withstand high-energy pulses in the avalanche and commutation modes, ensuring reliability and robustness in harsh environments.
  • Logic-Level Gate Drive: The MOSFET can be driven by logic-level voltages, making it compatible with low-voltage control circuitry and simplifying the design of gate drive circuits.
  • Temperature Range: It operates over a wide temperature range, maintaining stability and performance from -55°C to 150°C.

Applications:

The versatility of the STU3N62K3 N-Channel MOSFET allows it to be used in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting Systems
  • DC-DC Converters
  • Motor Control Circuits
  • Power Management Functions

With its combination of high voltage capability, low on-resistance, and fast switching speeds, the STU3N62K3 from STMicroelectronics is a top choice for designers seeking to improve the efficiency and reliability of their power management systems. Its robust construction and capability to handle high-temperature environments make it a durable and long-lasting component for any electronic design.

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Pricing & Ordering

Quantity Unit Price Ext. Price
170+ $0.3488 $59.2960
405+ $0.2864 $115.9920
625+ $0.2772 $173.2500
865+ $0.2680 $231.8200
1,120+ $0.2587 $289.7440
1,495+ $0.2322 $347.1390
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 29,100 pieces
MOQ: 170 pcs
Order Increment : 1 pcs
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