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STU60N55F3

Part No STU60N55F3
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 80A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 2200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 8.5 mOhm @ 32A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 054396-STU60N55F3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STU60N55F3 CAD Model

Description

STU60N55F3 - High Performance N-Channel Power MOSFET

The STU60N55F3 is a state-of-the-art N-channel Power MOSFET from STMicroelectronics, designed to deliver high efficiency and performance for a wide range of applications. This power MOSFET is a part of STMicroelectronics' MDmesh™ III series, which is renowned for its excellent on-state resistance (R<sub>DS(on)) and superior switching performance.

The STU60N55F3 boasts a robust and durable design, featuring a maximum continuous drain current (I<sub>D) of 60A, which makes it suitable for handling high current loads efficiently. With a drain-source voltage (V<sub>DS) of up to 550V, it is well-suited for high voltage applications, ensuring reliable operation even under stressful conditions.

One of the key features of this Power MOSFET is its low gate charge (Q<sub>g), which translates to reduced switching losses. This characteristic, combined with the device's low R<sub>DS(on), provides an excellent figure of merit (FOM) that is critical for energy-sensitive designs. The STU60N55F3 is optimized for high-frequency switching applications, including resonant converters, which benefit from its fast recovery diode.

Furthermore, the STU60N55F3 is encapsulated in a TO-220 package, which is widely used in the industry and known for its good thermal performance. The package ensures efficient heat dissipation, contributing to the MOSFET's reliability and longevity. The device is also RoHS compliant, meeting the environmental standards for hazardous substance restrictions.

Applications that can benefit from the STU60N55F3's features include switch-mode power supplies (SMPS), lighting ballasts, welding equipment, and other power conversion systems that require high efficiency and power density. Its robustness also makes it ideal for automotive applications, where reliability is of utmost importance.

In summary, the STU60N55F3 from STMicroelectronics is a powerful addition to any high-performance power management design. With its excellent efficiency, thermal performance, and reliability, it represents a superior choice for designers looking to optimize their power systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9469 $58.4070
75+ $1.5975 $119.8125
115+ $1.5476 $177.9740
155+ $1.4977 $232.1435
200+ $1.4477 $289.5400
270+ $1.2980 $350.4600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,060 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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