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STU7N80K5

Part No STU7N80K5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 800V 6A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 100μA
Max Gate Charge 13.4nC @ 10V
Max Input Capacitance 360pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 1.2 Ohm @ 3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 212420-STU7N80K5
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STU7N80K5 CAD Model

Description

The STU7N80K5 is a high voltage N-channel Power MOSFET designed and manufactured by the renowned semiconductor company, STMicroelectronics. This device is part of the MDmesh™ K5 series, which is well-known for its excellent energy efficiency and performance in high voltage applications.

With a drain-source voltage (V<sub>DS) of 800 V, the STU7N80K5 is suitable for a wide range of power applications, including switch-mode power supplies (SMPS), lighting, welding, and high-performance drives. The MOSFET is capable of handling continuous drain currents (I<sub>D) up to 7 A, making it a robust choice for demanding environments.

One of the key features of the STU7N80K5 is its low on-resistance (R<sub>DS(on)) of just 5 Ω typical. This characteristic ensures minimal power loss during operation, leading to higher efficiency and reliability in electronic circuits. Additionally, the device's MDmesh™ K5 technology enables fast switching, further contributing to the overall efficiency of the system.

The STU7N80K5 comes in a surface-mount DPAK package, which is favored for its compact footprint and ease of integration into various circuit designs. The package is designed to offer excellent thermal performance, ensuring the MOSFET can operate reliably over a wide temperature range.

STMicroelectronics has equipped the STU7N80K5 with Zener-protected gate, providing intrinsic protection against electrostatic discharge (ESD) and enhancing the robustness of the device in harsh electrical environments. This feature is particularly important for maintaining the longevity and stability of the MOSFET in industrial applications.

Overall, the STU7N80K5 is a powerful and reliable component that provides designers with a high-performance solution for their high-voltage power conversion needs. Its combination of high voltage capability, low on-resistance, and fast switching makes it an excellent choice for energy-efficient power management in a broad array of electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7059 $59.7065
85+ $1.3998 $118.9830
130+ $1.3561 $176.2930
180+ $1.3123 $236.2140
230+ $1.2686 $291.7780
305+ $1.1374 $346.9070
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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