The STU8N80K5 is a state-of-the-art N-channel Power MOSFET presented by STMicroelectronics, designed to meet a wide range of high-efficiency power conversion applications. This device is part of the SuperMESH™ K5 family, which is well-known for its excellent RDS(on) area ratio and reduced gate charge, providing superior performance in power switching circuits.

Key Features

• High Voltage Capability: The STU8N80K5 can handle up to 800 V, making it suitable for high voltage applications.
• Low On-resistance: With a typical on-resistance of just 1.9 Ω, this MOSFET ensures high efficiency and low conduction losses.
• High Current Rating: It has a continuous current rating of 7 A, capable of handling significant power for a wide range of applications.
• Reduced Gate Charge: The device features a minimized gate charge, which results in faster switching and reduced switching losses.
• 100% Avalanche Tested: This guarantees robustness and reliability, assuring performance under extreme conditions.
• Zener-protected: The MOSFET is equipped with an integrated Zener diode for gate protection, enhancing its durability against voltage spikes.

Applications

The STU8N80K5 is ideal for a variety of applications, including:

• Switching power supplies
• Power adapters
• Power factor correction circuits
• LED lighting solutions
• High-efficiency DC-DC converters

Package Details

This Power MOSFET comes in a TO-251 package, which is designed for through-hole mounting. The package is optimized to achieve a compact and robust design, ensuring ease of integration into various circuit designs.

Quality and Reliability

STMicroelectronics is committed to delivering high-quality products. The STU8N80K5 is manufactured with the highest standards, ensuring reliability and performance consistency for the most demanding applications.