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STV300NH02L

Part No STV300NH02L
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 24V 280A POWERSO-10
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 24V
Continuous Drain Current at 25°C 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V, 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 109nC @ 10V
Max Input Capacitance 7055pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 1 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package 10-PowerSO
Dimension PowerSO-10 Exposed Bottom Pad
Win Source Part Number 006015-STV300NH02L
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STV300NH02L CAD Model

Description

STV300NH02L - N-channel 24 V, 300 A, 2.7 mΩ, STripFET H6 Power MOSFET

The STV300NH02L from STMicroelectronics is a high-performance N-channel Power MOSFET designed for the most demanding applications that require efficient power conversion and switching. This MOSFET is part of the STripFET H6 series, which is renowned for its low on-state resistance and high switching performance.

The device features a drain-to-source voltage (V<sub>DS) of 24 V, making it suitable for low voltage applications such as DC-DC converters, motor control in automotive environments, and high-efficiency power supplies. With a continuous drain current (I<sub>D) of 300 A at 25°C, the STV300NH02L is capable of handling high current loads, which is essential for applications that demand robust power handling capabilities.

One of the key attributes of the STV300NH02L is its ultra-low on-resistance (R<sub>DS(on)) of just 2.7 mΩ. This low resistance ensures minimal power loss during operation, which enhances overall system efficiency and reduces thermal stress on the device. The low gate charge (Q<sub>g) further improves the switching performance, which is critical for high-speed switching applications.

The MOSFET is housed in a compact and robust PowerFLAT 8x8 HV package, which offers excellent thermal performance and is optimized for surface-mount technology (SMT) processes. The package design also contributes to a reduced footprint on the PCB, allowing for more compact circuit designs.

Additional features of the STV300NH02L include a 100% avalanche tested design, which ensures reliability and robustness under harsh operating conditions. The device also meets the stringent automotive-grade quality standards, which is a testament to its durability and performance consistency.

In summary, the STV300NH02L N-channel Power MOSFET from STMicroelectronics is a high-quality component that offers efficient power management solutions for a wide range of applications. Its low on-resistance, high current capability, and fast switching performance make it an ideal choice for designers looking to optimize their power systems for both performance and size.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $12.0441 $60.2205
11+ $9.8824 $108.7064
16+ $9.5736 $153.1776
22+ $9.2647 $203.8234
28+ $8.9559 $250.7652
38+ $8.0294 $305.1172
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,400 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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