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STW11NB80

Part No STW11NB80
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 11A TO-247
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 70nC @ 10V
Max Input Capacitance 2900pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 190W (Tc)
Maximum Rds On at Id,Vgs 800 mOhm @ 5.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Dimension TO-247-3
Win Source Part Number 1104017-STW11NB80
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STW11NB80 CAD Model

Description

STW11NB80 - N-Channel 800V - 0.65Ω - 11A - TO-247 PowerMESH™ IGBT

The STW11NB80 is a high voltage N-channel PowerMESH™ IGBT designed and manufactured by STMicroelectronics, a global semiconductor leader. This device is specifically engineered to meet the high efficiency and reliability requirements of power electronic applications such as switch-mode power supplies, motor control, and inverter systems.

Key Features

  • High Voltage Capability: With an 800V maximum breakdown voltage, the STW11NB80 is suitable for applications that require high voltage operation, ensuring safe operation under stress conditions.
  • Low On-Resistance: The device boasts an on-resistance of only 0.65Ω, which contributes to its high efficiency by minimizing conduction losses when the IGBT is in the 'on' state.
  • High Current Rating: With a continuous current rating of 11A, this IGBT can handle significant power levels, making it ideal for high power density applications.
  • TO-247 Package: The robust TO-247 package offers excellent thermal performance and is widely used for high power devices. It ensures that the device can handle high thermal and electrical loads.

Applications

  • Switch-mode power supplies (SMPS)
  • Motor control systems
  • UPS systems
  • Power inverters
  • High-performance power conversion

Benefits

The STW11NB80 IGBT combines the simple gate-drive characteristics of MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors. This hybrid technology equips the device with an excellent trade-off between switching performance and conduction losses, making it highly efficient in a variety of power applications. Additionally, the PowerMESH™ technology ensures an outstanding performance in terms of diode reverse recovery time, which is critical for high-frequency operations.

STMicroelectronics' commitment to innovation and quality is reflected in the STW11NB80, which is designed to meet stringent standards, ensuring reliability and a long operational lifespan for the end products. For designers and engineers looking for a high-performance IGBT that can drive their power applications to new heights, the STW11NB80 is an excellent choice.

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