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STW13NK100Z

Part No STW13NK100Z
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1KV 13A TO-247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1000V (1kV)
Continuous Drain Current at 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 150μA
Max Gate Charge 266nC @ 10V
Max Input Capacitance 6000pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 350W (Tc)
Maximum Rds On at Id,Vgs 700 mOhm @ 6.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Dimension TO-247-3
Win Source Part Number 038270-STW13NK100Z
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STW13NK100Z CAD Model

Description

STW13NK100Z - N-Channel 1000V - 0.85 Ohm - 13A - TO-247 SuperMESH™ Power MOSFET

The STW13NK100Z is a high voltage N-channel Power MOSFET designed and manufactured by STMicroelectronics. It is part of the SuperMESH™ series, which is known for its exceptional performance in terms of both switching speed and resistance. This particular MOSFET is designed to handle continuous drain currents of up to 13A, making it suitable for a wide range of high-power applications.

With a drain-source voltage of 1000V, this MOSFET can be used in circuits that require high voltage handling capabilities. The low on-resistance of 0.85 Ohm minimizes conduction losses, contributing to its efficiency in power management tasks. This feature, combined with a high threshold voltage, ensures that the device operates reliably and with minimal unintended switching, providing a stable performance in various applications.

The STW13NK100Z is housed in a TO-247 package, which is known for its ability to handle high current levels due to its excellent heat dissipation characteristics. This makes the MOSFET ideal for use in power supplies, lighting applications, high-performance drives, and other demanding electronic circuits where thermal management is crucial.

Key features of the STW13NK100Z include:

  • 100% avalanche tested, ensuring robustness and reliability under extreme conditions.
  • Gate charge minimized for reduced switching losses, which is particularly beneficial in high-frequency applications.
  • Very low intrinsic capacitances for improved switching performance.
  • Zener-protected, providing an integrated solution to protect against overvoltage events.

STMicroelectronics' commitment to quality means that the STW13NK100Z is manufactured to meet the highest industry standards. With its combination of high voltage capability, low on-resistance, and efficient thermal properties, this MOSFET is an excellent choice for designers looking to optimize their power management systems for both performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $9.8692 $59.2152
13+ $8.0979 $105.2727
20+ $7.8448 $156.8960
27+ $7.5917 $204.9759
35+ $7.3387 $256.8545
46+ $6.5795 $302.6570
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,370 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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