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STW13NK60Z

Part No STW13NK60Z
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 13A TO-247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 100μA
Max Gate Charge 92nC @ 10V
Max Input Capacitance 2030pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 550 mOhm @ 4.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Dimension TO-247-3
Win Source Part Number 006140-STW13NK60Z
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STW13NK60Z CAD Model

Description

The STW13NK60Z is a high-performance N-Channel Power MOSFET produced by STMicroelectronics, a global leader in semiconductor solutions. This device is part of ST's MDmesh™ series, which is renowned for its excellent efficiency and thermal performance. The STW13NK60Z is designed to meet the stringent requirements of a wide range of electronic applications, including switch-mode power supplies, motor control, and power conversion systems.

With a voltage rating of 600V, this MOSFET is well-suited for high-voltage applications. Its low on-resistance of 0.35Ω ensures minimal power loss during operation, making it an energy-efficient choice for designers. The device is capable of handling a continuous current of up to 11A, which makes it robust enough to drive significant loads.

The STW13NK60Z comes in a TO-247 package, which is preferred for its ability to handle high current levels due to its excellent thermal dissipation characteristics. This package makes the MOSFET an ideal choice for applications where thermal management is crucial.

One of the key features of this MOSFET is the MDmesh™ technology, which combines a vertical structure with a company-specific strip layout to yield one of the world's lowest on-resistance and gate charge. These features translate into reduced conduction and switching losses, enabling high-efficiency power management.

Other notable features include a fast recovery diode, which is essential for high-speed switching applications. The device also boasts a low gate charge (Qg), low crss, and excellent dv/dt capability, providing an optimal solution for a wide range of power applications.

In summary, the STW13NK60Z Power MOSFET is a robust, high-voltage, and energy-efficient component that is well-suited for demanding power applications. Its advanced technology and thermal properties make it a reliable choice for engineers looking to enhance system performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.4648 $59.1552
58+ $2.0224 $117.2992
89+ $1.9600 $174.4400
122+ $1.8965 $231.3730
158+ $1.8330 $289.6140
211+ $1.6436 $346.7996
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 24 pcs
Order Increment : 1 pcs
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