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STW23NM60N

Part No STW23NM60N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 19A TO247-3
Sample
Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr STMicroelectronics
Series MDmesh™ II
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 2050 pF @ 50 V
Power Dissipation (Max) 150W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
Base Product Number STW23N
Standard Package 30 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 348912-STW23NM60N
Ultra Librarian 3D Model Ultra Librarian STW23NM60N CAD Model

Description

The STW23NM60N is a high-performance N-channel 600V Power MOSFET produced using STMicroelectronics' advanced MDmesh™ technology. This power MOSFET is designed to meet the stringent requirements of a wide range of applications, including switch-mode power supplies (SMPS), lighting, welding, AC-DC converters, and motor control. Its state-of-the-art technology provides exceptional RDS(on) per area combined with excellent switching performance, making the STW23NM60N an efficient and reliable choice for high-power, high-efficiency applications.

Key Features

  • Voltage Rating: The STW23NM60N boasts a high voltage rating of 600V, making it suitable for various applications that require high voltage operations.
  • Low On-Resistance: With an RDS(on) of only 0.19 ohm, this MOSFET offers reduced conduction losses, enhancing overall efficiency in power conversion systems.
  • High Current Capability: The device is capable of handling continuous currents up to 17.5A, providing robust performance for demanding power applications.
  • Fast Switching Speed: The fast-switching speed of the STW23NM60N minimizes energy losses during the transition from ON to OFF states and vice versa, contributing to the efficiency of the overall system.
  • Low Gate Charge: A low gate charge enables faster switching and reduced driving power, which is crucial for high-frequency operations.
  • 100% Avalanche Tested: This feature ensures that the MOSFET can withstand high-energy pulses in the avalanche and commutation modes, adding to the reliability of the device.

Applications

The versatility of the STW23NM60N allows it to be used in a variety of applications, including:

  • High-efficiency switch-mode power supplies (SMPS)
  • Power factor correction (PFC) circuits
  • Electronic lamp ballasts
  • Welding equipment
  • AC-DC converters for telecom, server, and industrial systems
  • Motor control applications

With its combination of high voltage capability, low on-resistance, and fast switching performance, the STW23NM60N from STMicroelectronics is an ideal solution for designers seeking to improve the efficiency and reliability of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8492 $64.7220
80+ $1.5177 $121.4160
120+ $1.4703 $176.4360
165+ $1.4230 $234.7950
210+ $1.3756 $288.8760
285+ $1.2335 $351.5475
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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