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STW24N60M6

Part No STW24N60M6
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V TO247  /  N-Channel 600 V 17A (Tj) Through Hole TO-247-3
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ M6
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 17A (Tj)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
Base Product Number STW24
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names -1138-STW24N60M6,497-18251
Standard Package 600
Win Source Part Number 1203954-STW24N60M6
Ultra Librarian 3D Model Ultra Librarian STW24N60M6 CAD Model

Description

STW24N60M6 - High-Performance N-Channel Power MOSFET

The STW24N60M6 is a state-of-the-art N-channel Power MOSFET from STMicroelectronics, designed to deliver high efficiency and reliability for a wide range of applications. This power MOSFET is a part of STMicroelectronics' MDmesh™ M6 series, which utilizes an innovative proprietary vertical structure that provides superior performance in terms of low on-resistance, high dv/dt capability, and excellent switching behavior.

Key Features

  • Advanced MDmesh™ M6 Technology: The STW24N60M6 incorporates the latest advancements in superjunction technology, ensuring low on-resistance and reduced gate charge for high-efficiency power conversion.
  • High Current Rating: With a continuous drain current of up to 18A, this MOSFET can handle significant power levels, making it suitable for demanding applications.
  • High Voltage Capability: The device is capable of withstanding voltages up to 600V, providing a wide safety margin for applications involving high voltage operations.
  • Low Gate Charge (Qg): The optimized gate charge enables faster switching speeds, which contributes to improved overall performance in high-frequency circuits.
  • Reduced On-Resistance (Rds(on)): A low on-resistance minimizes conduction losses and helps in achieving higher efficiency in power conversion.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring robustness and reliability under harsh conditions.
  • Enhanced dv/dt Capability: This feature ensures stable operation even under rapid voltage changes, making the MOSFET suitable for applications with stringent dv/dt requirements.

Applications

The STW24N60M6 is versatile and can be used in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting
  • High-Efficiency DC/DC Converters
  • Welding Equipment
  • Uninterruptible Power Supplies (UPS)
  • Solar Inverters
  • Electric Vehicle (EV) Charging Stations

With its robust design and exceptional electrical characteristics, the STW24N60M6 is an ideal choice for designers looking to improve the performance and reliability of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.3657 $52.3884
28+ $3.5821 $100.2988
44+ $3.4702 $152.6888
60+ $3.3583 $201.4980
78+ $3.2463 $253.2114
104+ $2.9105 $302.6920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,810 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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