STW28N65M2 - STMicroelectronics

The STW28N65M2 is a high-performance N-channel 650V MDmesh™ M2 Power MOSFET designed and manufactured by STMicroelectronics. This MOSFET utilizes the second generation of MDmesh™ technology, which combines the benefits of reduced on-resistance, high dv/dt capability, and exceptional switching performance, making it a prime choice for a wide range of power applications.

Key Features:

• Voltage Rating: The device is rated for a drain-source voltage (V<sub>DS) of 650V, which is suitable for high-voltage applications.
• Low On-Resistance: The STW28N65M2 boasts a low on-resistance (R<sub>DS(on)) of only 0.085 Ω, minimizing conduction losses and improving efficiency.
• High Current Capability: With a continuous drain current (I<sub>D) of 28A, this MOSFET can handle significant power levels, ideal for demanding power conversion systems.
• Enhanced Switching Performance: The fast switching speed of the device reduces switching losses and improves performance in applications such as switch-mode power supplies and power converters.
• High dv/dt Capability: The MOSFET's high dv/dt rating ensures reliable operation even under harsh switching conditions or noisy environments.
• Low Gate Charge: A reduced gate charge (Q<sub>g) leads to lower driving power requirements and simplifies the design of the driving circuitry.
• 100% Avalanche Tested: Each unit is guaranteed to withstand stressful conditions, ensuring reliability and robustness in real-world applications.

Applications:

The STW28N65M2 is well-suited for a variety of applications, including:

• Switch Mode Power Supplies (SMPS)
• Power Factor Correction (PFC) circuits
• High-efficiency DC-DC converters
• LED lighting solutions
• Welding equipment
• Uninterruptible Power Supplies (UPS)
• Solar inverters and renewable energy systems

With its robust design and advanced technology, the STW28N65M2 from STMicroelectronics is a reliable and efficient choice for designers looking to optimize their power management systems.