The STW65N80K5 is a state-of-the-art power MOSFET from STMicroelectronics, designed for high-efficiency power conversion applications. This device is part of STMicroelectronics' MDmesh™ K5 series, which utilizes an innovative proprietary vertical structure. The STW65N80K5 is characterized by an extremely low on-resistance (R<sub>DS(on)) and a high breakdown voltage (V<sub>DSS), making it an excellent choice for a wide range of high-performance applications.

Key Features

• High Voltage Capability: The STW65N80K5 boasts a drain-source voltage (V<sub>DSS) of 800V, providing a wide safety margin for applications requiring high voltage operation.
• Low On-Resistance: With an R<sub>DS(on) value as low as 0.065Ω, this power MOSFET ensures minimal conduction losses, which is critical for improving overall efficiency in power systems.
• Reduced Gate Charge: The device's low gate charge (Q<sub>g) reduces switching losses, which is beneficial for high-frequency switching applications.
• Fast Recovery Diode: An integrated fast recovery diode provides improved performance in body diode reverse recovery, which is particularly useful in hard-switching conditions.
• 100% Avalanche Tested: Guaranteeing reliability, the STW65N80K5 is tested for avalanche ruggedness, ensuring it can withstand tough conditions.

Applications

The versatility of the STW65N80K5 allows it to be used in a variety of applications, including but not limited to:

• Switch Mode Power Supplies (SMPS)
• LED Lighting
• Welding Equipment
• High-Frequency Converters
• Solar Inverters
• Uninterruptible Power Supplies (UPS)

The STW65N80K5 is a testament to STMicroelectronics' commitment to providing high-quality, reliable components for the power electronics market. Its robust design and exceptional performance parameters make it an ideal choice for engineers looking to optimize their power conversion systems.