EN
  • EN
  • DE

STWA72N60DM2AG

Part No STWA72N60DM2AG
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
Need Help

Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series Automotive, AEC-Q101
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 42mOhm @ 33A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 121 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 5508 pF @ 100 V
Power Dissipation (Max) 446W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247 Long Leads
Package / Case TO-247-3
Base Product Number STWA72
Other Names 497-STWA72N60DM2AG
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278144-STWA72N60DM2AG
Ultra Librarian 3D Model Ultra Librarian STWA72N60DM2AG CAD Model

Description

The STWA72N60DM2AG is a state-of-the-art, high-performance N-channel 600V MDmesh™ DM2 Power MOSFET manufactured by STMicroelectronics. This advanced power MOSFET is designed utilizing the company's innovative MDmesh technology, which combines excellent RDS(on) with reduced gate charge, ensuring high efficiency and reliability for a wide range of applications.

Key Features

  • High Voltage Capability: With a drain-source voltage (VDS) of 600V, the STWA72N60DM2AG is suitable for high-voltage applications, providing robustness and reliability.
  • Low On-Resistance: The device features a very low on-state resistance (RDS(on)) of 0.036 Ohm, which translates to reduced conduction losses and improved overall efficiency.
  • Fast Switching Speed: The fast-switching speed of this MOSFET makes it ideal for high-frequency applications, contributing to improved performance and reduced switching losses.
  • Enhanced Power Density: Thanks to the MDmesh DM2 technology, the STWA72N60DM2AG offers an enhanced power density that allows for more compact designs without compromising performance.
  • Improved Gate Charge: The device features an optimized gate charge (Qg) that facilitates easier drive and contributes to energy savings during operation.

Applications

The STWA72N60DM2AG is designed for a variety of applications where high efficiency and power density are required. It is particularly well-suited for:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting
  • Welding Equipment
  • Solar Inverters
  • Uninterruptible Power Supplies (UPS)
  • High-Performance Power Converters

Package and Quality

The STWA72N60DM2AG is available in a TO-247 long leads package, providing excellent thermal performance and simplifying the mounting process. STMicroelectronics is committed to delivering high-quality products, and this MOSFET is no exception. It meets stringent quality standards, ensuring reliable operation in demanding environments.

Overall, the STWA72N60DM2AG Power MOSFET from STMicroelectronics represents a blend of cutting-edge technology and performance, ideal for designers looking to create efficient and compact power management solutions.

You May Also Be Interested in

Hitachi, Ltd
Silicon N-Channel MOS FET UHF Power Amplifier
Need more? Email Us
Panjit
20V N-Channel Enhancement Mode MOSFET – ESD Protected
Lowest to $0.0508
Rohm Semiconductor
1.5V Drive Pch MOSFET
Lowest to $5.3026
Hitachi, Ltd
Silicon P Channel MOS FET High Speed Switching
Lowest to $1.4264
ON Semiconductor
Ultrahigh-Speed Switching Applications
Lowest to $0.4123
Renesas Electronics America
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Lowest to $7.5410
Toshiba Semiconductor and Storage
Switching Voltage Regulators
Lowest to $5.4227
Alpha & Omega Semiconductor Inc.
250V,20A N-Channel MOSFET
Lowest to $0.3708
Infineon Technologies
OptiMOSTM Power-MOSFET
Lowest to $0.7540

Top Sellers

FTDI, Future Technology Devices International Ltd
USB-to-UART 1-CH 512byte FIFO 5V 12-Pin DFN EP T/R / IC USB SERIAL BASIC UART 12DFN
Lowest to $4.3955
FTDI, Future Technology Devices International Ltd
IC USB FS SERIAL UART 28-SSOP
Lowest to $4.9895
Peregrine Semiconductor
RF ATTENUATOR 31.5DB 50OHM 20QFN
Lowest to $2.2891
FTDI, Future Technology Devices International Ltd
IC USB SERIAL BASIC UART 16SSOP
Lowest to $6.4151
Nexperia USA Inc.
DIODE GEN PURP 100V 250MA SOD523
Lowest to $0.0214
Bosch Sensortec
IMU ACCEL/GYRO I2C/SPI 14LGA / Accelerometer, Gyroscope, 6 Axis Sensor I2C, SPI Output
Lowest to $3.6828
FTDI, Future Technology Devices International Ltd
IC USB SERIAL BASIC UART 16QFN
Lowest to $6.6527
Texas Instruments
IC CTRLR HOT SWAP 48V 10-MSOP
Lowest to $2.3760
Texas Instruments
TRANS 8NPN DARL 50V 0.5A 18SO
Lowest to $5.9399
Bosch Sensortec
ACCELEROMETER 16LGA / Accelerometer, Gyroscope, 6 Axis Sensor I2C, SPI Output
Lowest to $11.8797
Cypress Semiconductor Corp
IC MCU USB PERIPH HI SPD 128LQFP
Lowest to $17.6608
Bosch Sensortec
SENSOR FLIPCORE/HALL SPI 12WLCSP / Geomagnetic Sensor
Lowest to $0.7841
ON Semiconductor
MOSFET N-CH 20V 915MA SOT-416
Lowest to $0.0543
JST Sales America Inc.
CONN HEADER GH TOP 4POS 1.25MM
Lowest to $0.1782
Kemet
RELAY GEN PURPOSE DPDT 2A 5V
Lowest to $0.9677

Shipping Information

Shipped from HK warehouse
Expected Shipping Date Get an estimate

Contact Us

*
*
*

FRAUD PREVENTION REMINDERS

Recently, We have discovered that criminals falsely claimed to be WIN SOURCE to commit fraud. Please note that the only official website & email suffix are win-source.group, win-source.net, winsourcectl.com and winsourceelec.com

More details about fraud prevention
RFQ RFQ RFQ BOM BOM BOM API API API Sell Sell Sell your Excess