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Same model may have multiple batches, images only for reference.
KTC3198-Y B1G Real Image
Same model may have multiple batches, images only for reference.

KTC3198-Y B1G

Part No KTC3198-Y B1G
Manufacturer Taiwan Semiconductor
Catalog Transistors (BJT) - Single
Description TRANSISTOR, NPN, 50V, 0.15A, 300
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Taiwan Semiconductor
Status Active
Transistor Polarity NPN
Maximum Current Collector 150mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 250mV @ 10mA, 100mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 70 @ 2mA, 6V
Maximum Power Dissipation 500mW
Frequency - Transition 80MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-92
Win Source Part Number 1027157-KTC3198-Y B1G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian KTC3198-Y B1G CAD Model

Description

The KTC3198-Y B1G is an NPN transistor manufactured by Taiwan Semiconductor.

  • Maximum Collector Current: 150mA
  • Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 500mW
  • Typical Gain: 70 @ 2mA, 6V
  • Maximum Vce (sat): 250mV @ 10mA, 100mA
  • Operating Temperature: -55°C to 150°C
  • Mounting Type: Through-hole
  • Supply: Sufficient
  • Popularity: Medium

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