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Same model may have multiple batches, images only for reference.
TSM020N04LCR RLG Real Image
Same model may have multiple batches, images only for reference.

TSM020N04LCR RLG

Part No TSM020N04LCR RLG
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 170A 8PDFN / N-Channel 40 V 170A (Tc) 104W (Tc) Surface Mount 8-PDFN (5x6)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Mfr Taiwan Semiconductor
Series -
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2mOhm @ 27A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7942 pF @ 20 V
FET Feature -
Power Dissipation (Max) 104W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-PDFN (5x6)
Package / Case 8-PowerTDFN
Base Product Number TSM020
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 2,500 pcs
Win Source Part Number 1383735-TSM020N04LCR RLG
Ultra Librarian 3D Model Ultra Librarian TSM020N04LCR RLG CAD Model

Description

The TSM020N04LCR RLG is an N-channel MOSFET transistor manufactured by Taiwan Semiconductor.

  • Vdss: 40 V
  • Id: 170A @ 25°C
  • Rds On: 2mOhm @ 27A, 10V
  • Vgs(th): 2.5V @ 250μA
  • Power Dissipation: 104W @ Tc
  • Mounting Type: Surface Mount
  • Package: 8-PowerTDFN
  • Qg: 150nC @ 10V
  • Ciss: 7942pF @ 20V

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