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TSM036N03PQ56 RLG

Part No TSM036N03PQ56 RLG
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET, SINGLE, N-CHANNEL, TRENC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Taiwan Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 124A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 50nC @ 10V
Max Input Capacitance 2530pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 3.6 mOhm @ 22A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-PDFN (5x6)
Dimension 8-PowerTDFN
Win Source Part Number 1114679-TSM036N03PQ56 RLG
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TSM036N03PQ56 RLG CAD Model

Description

The TSM036N03PQ56 RLG MOSFET is a N-Channel transistor designed for use in discrete semiconductor products.

  • Manufacturer: Taiwan Semiconductor
  • Power Dissipation: 83W (Tc)
  • Package: 8-PowerTDFN
  • Mounting: SMD (SMT) technology
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 124A (Tc)
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 50nC @ 10V
  • Maximum Input Capacitance: 2530pF @ 15V
  • Maximum Rds On @ Id,Vgs: 3.6 mOhm @ 22A, 10V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Suitable for: applications in various fields such as automotive, consumer, and industrial

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5812 $58.1200
245+ $0.4769 $116.8405
375+ $0.4620 $173.2500
520+ $0.4471 $232.4920
670+ $0.4322 $289.5740
895+ $0.3875 $346.8125
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,080 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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