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TSM110NB04CR RLG

Part No TSM110NB04CR RLG
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 12A/54A 8PDFN / N-Channel 40 V 12A (Ta), 54A (Tc) 3.1W (Ta), 68W (Tc) Surface Mount 8-PDFN (5x6)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Mfr Taiwan Semiconductor
Series -
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1443 pF @ 20 V
FET Feature -
Power Dissipation (Max) 3.1W (Ta), 68W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-PDFN (5x6)
Package / Case 8-PowerTDFN
Base Product Number TSM110
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 2,500 pcs
Win Source Part Number 1383739-TSM110NB04CR RLG
Ultra Librarian 3D Model Ultra Librarian TSM110NB04CR RLG CAD Model

Description

The TSM110NB04CR RLG is a N-Channel MOSFET transistor designed for use in discrete semiconductor products, manufactured by Taiwan Semiconductor.

  • Drain to Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 12A @ 25°C
  • Rds On (Max): 11mOhm @ 12A and 10V
  • Gate Charge (Qg): 23nC @ 10V
  • Package: 8-PowerTDFN
  • Mounting Type: Surface Mount
  • Power Dissipation: 3.1W @ Ta and 68W @ Tc

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.4892 $51.3660
250+ $0.4014 $100.3500
390+ $0.3889 $151.6710
535+ $0.3764 $201.3740
690+ $0.3638 $251.0220
920+ $0.3262 $300.1040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 600 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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