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Same model may have multiple batches, images only for reference.
TSM1N45DCS
Same model may have multiple batches, images only for reference.

TSM1N45DCS

Part No TSM1N45DCS
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 450V 0.5A Dual N-Channel Power MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Breakdown Voltage 51 V
Clamping Voltage 70.1 V
Drain to Source Voltage (Vdss) 450 V
Forward Voltage 1 V
Gate to Source Voltage (Vgs) 3 V
Input Capacitance 185 pF
Max Breakdown Voltage 9.8 V
Max Forward Surge Current (Ifsm) 2.5 A
Max Junction Temperature (Tj) 150 °C
Max Repetitive Reverse Voltage (Vrrm) 250 V
Max Reverse Leakage Current 1 µA
Min Breakdown Voltage 25.4 V
Number of Channels 2
Number of Pins 8
Peak Pulse Current 21.4 A
Peak Pulse Power 1.5 kW
Power Dissipation 200 mW
Reverse Recovery Time 50 ns
Reverse Standoff Voltage 24 V
Test Current 2.5 mA
Zener Voltage 75 V
Win Source Part Number 979585-TSM1N45DCS
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Taiwan Semiconductor
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian TSM1N45DCS CAD Model

Description

This transistor from Taiwan Semiconductor has a Win Source part number of 979585-TSM1N45DCS.

  • Drain to Source Voltage (Vdss): 450 V
  • Breakdown Voltage: 51 V
  • Clamping Voltage: 70.1 V
  • Peak Pulse Current: 21.4 A
  • Forward Voltage: 1 V
  • Power Dissipation: 200 mW
  • Zener Voltage: 75 V
  • Input Capacitance: 185 pF
  • Maximum Repetitive Reverse Voltage (Vrrm): 250 V
  • Reverse Standoff Voltage: 24 V
  • Max Forward Surge Current (Ifsm): 2.5 A
  • Max Junction Temperature (Tj): 150 °C
  • Channels: 2
  • Pins: 8
  • Gate to Source Voltage (Vgs): 3 V
  • Max Reverse Leakage Current: 1 µA
  • Popularity: Low
  • Supply and Demand: Shortage

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