The TSM200N03DPQ33 RGG is an N-Channel enhancement mode MOSFET from Taiwan Semiconductor. This power MOSFET is designed for low voltage, high current applications, such as DC-DC converters and load switching. It features a low on-resistance (RDS(on)) for efficient power conversion and minimal power loss.

Applications

• DC-DC Converters
• Load Switching
• Power Management
• Battery Management Systems
• Portable Devices

Features

• N-Channel MOSFET
• Low On-Resistance (RDS(on))
• Low Gate Charge
• Logic Level Gate Drive
• Surface Mount Package
• RoHS Compliant

Benefits

• Provides efficient power conversion due to low on-resistance.
• Reduces power loss and heat generation.
• Logic level gate drive simplifies circuit design.
• Small surface mount package saves board space.

Additional Details

The TSM200N03DPQ33 RGG has a drain-source voltage (VDS) rating of 30V and a continuous drain current (ID) rating of 20A. The on-resistance (RDS(on)) is typically 3.3 mΩ at VGS = 10V. The gate threshold voltage (VGS(th)) is typically 1.5V. The device is available in a DFN3.3x3.3 package and is suitable for automated assembly. It is RoHS compliant and halogen-free.