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Same model may have multiple batches, images only for reference.
TSM210N06CZ C0G Taiwan Semiconductor
Same model may have multiple batches, images only for reference.

TSM210N06CZ C0G

Part No TSM210N06CZ C0G
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Taiwan Semiconductor Corporation
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 210A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.1mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7900 pF @ 30 V
Power Dissipation (Max) 250W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1315639-TSM210N06CZ C0G
Ultra Librarian 3D Model Ultra Librarian TSM210N06CZ C0G CAD Model

Description

The TSM210N06CZ C0G is an N-channel MOSFET transistor from Taiwan Semiconductor Corporation.

  • Drain to Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 210A @ 25°C
  • On-Resistance (Rds On): 3.1mOhm @ 90A and 10V
  • Package: TO-220-3

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