The Toshiba Semiconductor and Storage TPC8021-H(TE12LQ,M is a MOSFET transistor that is surface mountable. It is an N-channel FET type and has a drain to source voltage (Vdss) of 30 V. The current rating for continuous drain (Id) @ 25°C is 11A (Ta) and the Rds On (Max) @ Id, Vgs is 17mOhm @ 5.5A, 10V. The Vgs(th) (Max) @ Id is 2.3V @ 1mA and the power dissipation (Max) is 1W (Ta). The package/case is 8-SOIC (0.173", 4.40mm Width) and the supplier device package is 8-SOP (5.5x6.0). The gate charge (Qg) (Max) @ Vgs is 11 nC @ 10 V and the input capacitance (Ciss) (Max) @ Vds is 640 pF @ 10 V. The Vgs (Max) is ±20V and the temperature range for operating is 150°C (TJ). The transistor is REACH unaffected and is ideal for use in electronic applications that require high voltage and high-current switching.