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Same model may have multiple batches, images only for reference.
TSM2311CX RFG
Same model may have multiple batches, images only for reference.

TSM2311CX RFG

Part No TSM2311CX RFG
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET, SINGLE, P-CHANNEL, -20V,
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Taiwan Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Gate Charge 6nC @ 4.5V
Max Input Capacitance 640pF @ 6V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 900mW (Ta)
Maximum Rds On at Id,Vgs 55 mOhm @ 4A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1114727-TSM2311CX RFG
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian TSM2311CX RFG CAD Model

Description

The Taiwan Semiconductor TSM2311CX RFG is a P-channel MOSFET transistor.

  • Drain-Source Breakdown Voltage: 20V
  • Maximum Continuous Drain Current: 4A @ 25°C
  • Gate-Source Threshold Voltage: 1.4V @ 250μA
  • Maximum Gate Charge: 6nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 55 mOhm @ 4A, 4.5V
  • Package: SOT-23
  • Operating Temperature Range: -55°C to 150°C
  • Popularity: Medium
  • Supply and Demand: Sufficient

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