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Same model may have multiple batches, images only for reference.
TSM60N750CH Real Image
Same model may have multiple batches, images only for reference.

TSM60N750CH

Part No TSM60N750CH
Manufacturer Taiwan Semiconductor
Catalog OEM Parts (T - Z)
Description Single, N-Channel, Super Junction MOSFET, 554pF, 600V
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Breakdown Voltage 51 V
Clamping Voltage 70.1 V
Drain to Source Voltage (Vdss) 600 V
Forward Voltage 1 V
Gate to Source Voltage (Vgs) 3 V
Input Capacitance 554 pF
Max Breakdown Voltage 9.8 V
Max Forward Surge Current (Ifsm) 2.5 A
Max Junction Temperature (Tj) 150 °C
Max Repetitive Reverse Voltage (Vrrm) 250 V
Max Reverse Leakage Current 1 µA
Min Breakdown Voltage 25.4 V
Number of Channels 2
Peak Pulse Current 21.4 A
Peak Pulse Power 1.5 kW
Power Dissipation 200 mW
Reverse Recovery Time 50 ns
Reverse Standoff Voltage 24 V
RoHS Non-Compliant
Test Current 2.5 mA
Zener Voltage 75 V
Win Source Part Number 1101485-TSM60N750CH
Categories OEM Parts(T-Z)
Manufacturer Taiwan Semiconductor
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian TSM60N750CH CAD Model

Description

The TSM60N750CH is a highly efficient and reliable semiconductor that is perfect for a variety of applications.

  • Drain to Source Voltage: 600V
  • Clamping Voltage: 70.1V
  • Peak Pulse Current: 21.4A
  • Input Capacitance: 554pF
  • Forward Voltage: 1V
  • Power Dissipation: 200mW
  • Zener Voltage: 75V
  • Category: OEM parts

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