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Same model may have multiple batches, images only for reference.
TSM80N1R2CP
Same model may have multiple batches, images only for reference.

TSM80N1R2CP

Part No TSM80N1R2CP
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 800V, 5.5A, SINGLE N-CHANNEL POW
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Taiwan Semiconductor Corporation
Series -
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2.75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19.4 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 685 pF @ 100 V
FET Feature -
Power Dissipation (Max) 110W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number TSM80
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1380177-TSM80N1R2CP
Ultra Librarian 3D Model Ultra Librarian TSM80N1R2CP CAD Model

Description

The 1380177-TSM80N1R2CP is a single N-channel MOSFET transistor from Taiwan Semiconductor Corporation.

  • FET Type: MOSFET N-Channel, Single
  • Vdss: 800V
  • Id @ 25°C: 5.5A
  • Rds On @ Id, Vgs: 1.2Ohm @ 2.75A, 10V
  • Vgs(th) @ Id: 4V @ 250µA
  • Qg @ Vgs: 19.4nC @ 10V
  • Power Dissipation (Max): 110W
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak
  • Product Status: Active
  • REACH Status: REACH Unaffected

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