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CSD19532Q5B

Part No CSD19532Q5B
Manufacturer Texas Instruments
Catalog Transistors - FETs, MOSFETs - RF
Description 100 V N-Channel NexFET Power MOSFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Texas Instruments
Series NexFET
Packaging Reel - TR
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Vgs(th) (Maximum) @ Id 3.2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 62nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 4810pF @ 50V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 3.1W (Ta), 195W (Tc)
Rds On (Maximum) @ Id, Vgs 4.9 mOhm @ 17A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package 8-VSON (5x6)
Package 8-PowerTDFN
Win Source Part Number 1163535-CSD19532Q5B
Manufacturer Homepage www.ti.com
Family Name CSD19532Q5B
Introduction Date December 06, 2013
ECCN EAR99
Country of Origin Philippines
Halogen Free Not Compliant
Estimated EOL Date 2028
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Application Field Used in Power Management, Industrial
Ultra Librarian 3D Model Ultra Librarian CSD19532Q5B CAD Model

Description

The Texas Instruments CSD19532Q5B is a state-of-the-art N-channel NexFET™ power MOSFET designed to deliver high performance in power management applications. This highly efficient device is a testament to Texas Instruments' commitment to providing innovative solutions for power supply challenges. The CSD19532Q5B is well-suited for a range of applications, including synchronous buck converters, server and telecom power supplies, and industrial power designs.

Key Features

  • Low R<sub>DS(on): The device boasts an ultra-low drain-source on-resistance of only 8 mΩ at V<sub>GS = 10 V, which significantly reduces power losses and improves overall efficiency.
  • High Continuous Drain Current (I<sub>D): It supports a high continuous drain current of up to 100 A, making it capable of handling high power applications with ease.
  • Thermal Management: The CSD19532Q5B comes in a compact SON 5x6 mm plastic package with an exposed pad for enhanced thermal performance, ensuring reliable operation even under high power and temperature conditions.
  • Fast Switching Speed: Designed for fast switching applications, this MOSFET minimizes switching losses, which is critical for high-frequency power supplies.

Applications

Thanks to its robust feature set, the CSD19532Q5B is ideal for a variety of applications:

  • DC/DC Converters
  • Motor Drives
  • Power Over Ethernet (PoE) Systems
  • Point-of-Load (POL) Modules
  • Energy-Efficient Power Supplies

Quality and Reliability

As with all Texas Instruments products, quality and reliability are at the forefront. The CSD19532Q5B MOSFET is manufactured to meet the highest industry standards, ensuring a reliable performance for critical applications. With its advanced technology and proven durability, this device is designed to enhance system longevity and reduce the need for maintenance or replacements.

Conclusion

The Texas Instruments CSD19532Q5B NexFET™ power MOSFET is a high-performance solution designed for efficient power management. Its low on-resistance, high current capability, excellent thermal properties, and fast switching speeds make it an excellent choice for designers looking to optimize their power systems for both performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
27+ $1.8866 $50.9382
57+ $1.7672 $100.7304
88+ $1.7075 $150.2600
126+ $1.5881 $200.1006
164+ $1.5284 $250.6576
205+ $1.4687 $301.0835
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 13,876 pieces
MOQ: 27 pcs
Order Increment : 1 pcs
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