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CSD23381F4T

Part No CSD23381F4T
Manufacturer Texas Instruments
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 2.3A 3PICOSTAR  /  P-Channel 12 V 2.3A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR
Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Texas Instruments
Series FemtoFET™
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 175mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.14 nC @ 6 V
Vgs (Max) -8V
Input Capacitance (Ciss) (Max) @ Vds 236 pF @ 6 V
Power Dissipation (Max) 500mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 3-PICOSTAR
Package / Case 3-XFDFN
Base Product Number CSD23381
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Names 296-37782-1,TEXTISCSD23381F4T,296-37782-2,2156-CSD23381F4T,296-37782-6
Standard Package 250
Win Source Part Number 1000148-CSD23381F4T
Ultra Librarian 3D Model Ultra Librarian CSD23381F4T CAD Model

Description

The CSD23381F4T is a state-of-the-art MOSFET transistor designed and manufactured by Texas Instruments. This high-performance, ultra-small, N-channel device is optimized for power management applications and is part of TI's extensive portfolio of power management solutions. The CSD23381F4T is ideal for space-constrained and power-sensitive applications due to its tiny footprint and low on-resistance.

Key Features

  • Low On-Resistance: The CSD23381F4T boasts an exceptionally low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved power efficiency in operation.
  • Ultra-Small Package: Housed in a compact 0.6 mm x 1 mm, 4-bump, DSBGA package, this MOSFET is a perfect choice for applications where board space is at a premium, such as portable electronics.
  • High Continuous Drain Current: Its capability to handle a high continuous drain current (I<sub>D) makes it suitable for demanding applications.
  • Low Threshold Voltage: The low threshold voltage (V<sub>GS(th)) ensures that the device can be easily driven in low-voltage circuits, making it versatile for various applications.

Applications

With its exceptional features, the CSD23381F4T is ideal for a wide range of applications. These include, but are not limited to:

  • Load switches
  • Battery management systems
  • Power supply circuits
  • DC-DC converters
  • Portable devices

Quality and Reliability

Texas Instruments is known for its commitment to quality and reliability, and the CSD23381F4T is no exception. It is built to meet the stringent requirements of the industry, ensuring long-term performance and reliability. The device also comes with the support and assurance of TI's global technical and sales network.

Conclusion

In summary, the CSD23381F4T from Texas Instruments is a highly efficient, ultra-compact, and reliable MOSFET that is well-suited for modern power management applications. Its low on-resistance, high current capability, and small form factor make it an excellent choice for designers looking to optimize their power designs for both performance and size.

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