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Same model may have multiple batches, images only for reference.
CSD86311W1723 Real Image
Same model may have multiple batches, images only for reference.

CSD86311W1723

Part No CSD86311W1723
Manufacturer Texas Instruments
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 25V 4.5A 12DSBGA
Datasheet
CSD86311W1723 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Texas Instruments
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 4.5A
Maximum Rds On at Id,Vgs 39 mOhm @ 2A, 8V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Gate Charge 4nC @ 4.5V
Max Input Capacitance 585pF @ 12.5V
Maximum Power Dissipation 1.5W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 12-DSBGA (1.53x1.98)
Win Source Part Number 101529-CSD86311W1723
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian CSD86311W1723 CAD Model

Description

Optimize your power delivery with the CSD86311W1723, a dual N-channel MOSFET with unparalleled energy-saving characteristics.

Features and Benefits

  • High-frequency operation suitable for compact designs
  • Low Rds(on) for reduced conduction losses
  • Superior avalanche capability
  • Compact dual package design

Applications

  • Server power supplies
  • Automotive systems
  • Gaming consoles
  • Telecommunication equipment

This MOSFET is perfect for high-performance applications demanding stringent power efficiency.

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Pricing & Ordering

Quantity Unit Price Ext. Price
140+ $0.3648 $51.0720
335+ $0.2994 $100.2990
520+ $0.2900 $150.8000
715+ $0.2807 $200.7005
925+ $0.2713 $250.9525
1,235+ $0.2432 $300.3520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,000 pieces
MOQ: 140 pcs
Order Increment : 1 pcs
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