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LM5110-1SD

Part No LM5110-1SD
Manufacturer Texas Instruments
Catalog PMIC - Gate Drivers
Description LM5110 Dual 5A Compound Gate Driver with Negative Output Voltage Capability | IC DRIVER DUAL 5A NEG VOUT 10SON
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Categories Integrated Circuits
Manufacturer Texas Instruments
Packaging Tape and Reel
Driven Configuration Low-Side
Channel Type Independent
Number of Drivers 2
Gate Type N-Channel MOSFET
Supply Voltage (V) 3.5V ~ 14V
Logic Voltage - VIL, VIH 0.8V, 2.2V
Current - Peak Output (Source, Sink) 3A, 5A
Input Type Non-Inverting
Rise / Fall Time 14ns, 12ns
Temperature Range - Operating -40°C ~ 125°C
Mounting Style SMD
Manufacturer Package 10-WDFN Exposed Pad
Supplier Device Package 10-WSON (4x4)
Family Part Number LM5110
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1200394-LM5110-1SD
Manufacturer Homepage www.ti.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian LM5110-1SD CAD Model

Description

The LM5110-1SD from Texas Instruments is a versatile dual 5A compound gate driver designed to efficiently drive both the high-side and low-side N-Channel MOSFETs in synchronous buck or half-bridge configurations. This gate driver is particularly well-suited for high-frequency power conversion applications, where power density and efficiency are critical.

Key Features

  • High Peak Output Current: Capable of delivering peak output currents of up to 5A, the LM5110-1SD ensures robust driving of MOSFET gates for fast switching transitions, reducing power losses and improving overall efficiency.
  • Wide Supply Voltage Range: With an operating range from 5V to 15V, this gate driver is compatible with a variety of control ICs and can be easily integrated into different system voltage levels.
  • Independent Inputs for Flexibility: The LM5110-1SD features independent inputs for each driver, providing design flexibility and allowing for precise control of the timing for each MOSFET.
  • Compound Gate Driver Technology: Combining the advantages of both bipolar and CMOS transistors, the compound gate driver technology offers high peak current and low steady-state current, optimizing performance for both high-speed switching and power conservation.
  • Adaptive Dead-Time Control: This feature minimizes cross-conduction and shoot-through in synchronous buck applications, further enhancing efficiency and reliability.
  • Under-Voltage Lockout (UVLO): The built-in UVLO protection ensures that the gate driver operates only when the supply voltage is sufficient, safeguarding the MOSFETs from insufficient gate drive voltage.

Applications

The LM5110-1SD is ideal for a range of applications, including:

  • High-frequency DC/DC converters
  • Synchronous buck converters
  • Half-bridge and full-bridge converters
  • Motor control circuits
  • Class D audio amplifiers

With its robust output drive capability, comprehensive protection features, and flexible input configuration, the LM5110-1SD is a powerful solution for modern power management challenges. Texas Instruments' commitment to quality and performance makes this gate driver a reliable choice for engineers looking to optimize their power conversion systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.5393 $53.0895
35+ $2.9041 $101.6435
54+ $2.8133 $151.9182
74+ $2.7226 $201.4724
95+ $2.6318 $250.0210
128+ $2.3596 $302.0288
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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