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Same model may have multiple batches, images only for reference.
XP161A1265PR-G
Same model may have multiple batches, images only for reference.

XP161A1265PR-G

Part No XP161A1265PR-G
Manufacturer Torex Semiconductor Ltd
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 4A SOT89
Datasheet
XP161A1265PR-G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Torex Semiconductor Ltd
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.4V @ 1mA
Max Input Capacitance 320pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 55 mOhm @ 2A, 4.5V
Temperature Range - Operating 150°C (TA)
Mounting SMD (SMT)
Case / Package SOT-89
Dimension TO-243AA
Win Source Part Number 1119473-XP161A1265PR-G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian XP161A1265PR-G CAD Model

Description

The Torex Semiconductor Ltd XP161A1265PR-G MOSFET is a high-performance N-channel power MOSFET designed for use in a wide range of applications.

  • Maximum Power Dissipation: 2W (Ta)
  • Channel Type: N-channel MOSFET
  • Applications: Discrete Semiconductor Products
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 4A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 1.4V @ 1mA
  • Maximum Rds On @ Id,Vgs: 55 mOhm @ 2A, 4.5V
  • Maximum Gate-Source Voltage: ±12V
  • Case/Package: SOT-89
  • Dimension: TO-243AA
  • Supply and Demand Status: Balanced

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