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Same model may have multiple batches, images only for reference.
2SA1020-Y(T6CN,A,F Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

2SA1020-Y(T6CN,A,F

Part No 2SA1020-Y(T6CN,A,F
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS PNP 2A 50V TO226-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Bulk
Status Obsolete
Transistor Type PNP
Current - Collector (Ic) (Maximum) 2A
Voltage - Collector Emitter Breakdown (Maximum) 50V
Vce Saturation (Maximum) at Ib, Ic 500mV at 50mA, 1A
Current - Collector Cutoff (Maximum) 1μA (ICBO)
DC Current Gain (hFE) (Minimum) at Ic, Vce 70 at 500mA, 2V
Maximum Power 900mW
Frequency - Transition 100MHz
Temperature Range - Operating 150°C
Mounting Style Through Hole
Manufacturer Package TO-226-3, TO-92-3 Long Body
Supplier Device Package TO-92MOD
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 721439-2SA1020-Y(T6CN,A,F
Popularity Low
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2SA1020-Y(T6CN,A,F CAD Model

Description

The 2SA1020-Y(T6CN,A,F is a PNP Transistor manufactured by Toshiba Semiconductor and Storage. Toshiba Semiconductor and Storage

  • Application: high-speed switching applications
  • Features: low collector-emitter saturation voltage, high current gain
  • Compliance: RoHS compliant
  • Popularity: low
  • Status: obsolete
  • Maximum Power: 900mW

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Pricing & Ordering

Quantity Unit Price Ext. Price
355+ $0.1640 $58.2200
865+ $0.1340 $115.9100
1,330+ $0.1305 $173.5650
1,835+ $0.1259 $231.0265
2,360+ $0.1224 $288.8640
3,160+ $0.1097 $346.6520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,195 pieces
MOQ: 355 pcs
Order Increment : 1 pcs
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