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Same model may have multiple batches, images only for reference.
2SA1162-GR(T5L,T)
Same model may have multiple batches, images only for reference.

2SA1162-GR(T5L,T)

Part No 2SA1162-GR(T5L,T)
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description Trans GP BJT PNP 50V 0.15A 3-Pin S-Mini T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Collector Base Voltage (VCBO) 50 V
Collector Emitter Voltage (VCEO) 50 V
Emitter Base Voltage (VEBO) 5 V
Frequency 80 MHz
Max Collector Current 150 mA
Maximum Operating Temperature 125 °C
Max Power Dissipation 150 mW
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Elements 1
Number of Pins 3
Packaging Tape and Reel
Polarity PNP
Power Dissipation 150 mW
Radiation Hardening No
RoHS Compliant
Win Source Part Number 1036512-2SA1162-GR(T5L,T)
Categories RF Transistors(BJT)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SA1162-GR(T5L,T) CAD Model

Description

The Toshiba Semiconductor and Storage 2SA1162-GR(T5L,T) is a PNP RF transistor with a frequency of 80 MHz and power dissipation of 150 mW.

  • Maximum operating temperature: 125 °C
  • Collector base voltage (VCBO): 50 V
  • Collector emitter voltage (VCEO): 50 V
  • Package: Surface mount
  • RoHS compliant: Yes
  • Supply and demand status: Shortage

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