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2SA1162-Y(T5R

Part No 2SA1162-Y(T5R
Manufacturer Toshiba Semiconductor and Storage
Catalog Miscellaneous
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Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 815103-2SA1162-Y(T5R
Ultra Librarian 3D Model Ultra Librarian 2SA1162-Y(T5R CAD Model

Description

The 2SA1162-Y(T5R is a PNP silicon epitaxial transistor manufactured by Toshiba Semiconductor and Storage. Designed for audio frequency power amplifier applications, it's known for its robust characteristics and suitability for demanding audio circuits. The (T5R) suffix likely refers to a specific tape and reel packaging for automated assembly.

Applications

  • Audio power amplifiers: Used as the output transistor in power amplifier stages of audio equipment.
  • Home theater systems: Found in the amplifier sections of home theater receivers and systems.
  • Professional audio equipment: Employed in mixing consoles, studio monitors, and other professional audio gear.
  • High-fidelity audio amplifiers: Used in amplifiers aiming for high-quality sound reproduction.
  • Automotive audio amplifiers: Part of the amplifier circuits in car audio systems.

Features

  • PNP silicon epitaxial transistor: Offers reliable and efficient amplification.
  • High collector current capability: Allows driving of low impedance speakers.
  • High power dissipation: Provides headroom for dynamic audio signals.
  • Low saturation voltage: Minimizes power loss and increases efficiency.
  • Excellent frequency response: Ensures accurate amplification across the audio spectrum.

Benefits

  • High-quality audio output: Delivers clear and powerful sound reproduction.
  • Robust performance: Capable of handling demanding audio signals.
  • Efficient power usage: Reduces heat generation and improves amplifier efficiency.
  • Low distortion: Preserves the integrity of the audio signal.
  • Reliable operation: Designed for long-term stability in audio applications.

Additional Details

The 2SA1162-Y(T5R features a collector-emitter voltage (VCEO) of -60V, a collector current (IC) of -7A, and a collector power dissipation (PC) of 80W. It has a typical current gain (hFE) between 100 and 320, with the 'Y' designation specifying a particular hFE range. The operating junction temperature ranges from -55°C to +150°C. Typically packaged in a TO-220 type package for efficient heat dissipation. It's commonly used in complementary pairs with an NPN transistor such as the 2SC2706.

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