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2SA1162-Y(TE85L,F)

Part No 2SA1162-Y(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 12+
Reference case SOT-23
Manufacturer Toshiba Semiconductor and Storage
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Win Source Part Number 721444-2SA1162-Y(TE85L,F)
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SA1162-Y(TE85L,F) CAD Model

Description

The 2SA1162-Y(TE85L,F) is a PNP epitaxial planar silicon transistor manufactured by Toshiba Semiconductor and Storage. This transistor is designed for use in various amplifier and switching applications. The 'Y' in the part number typically denotes a specific gain ranking, indicating the transistor's current amplification factor (hFE).

Applications

  • Audio amplifiers: Used in pre-amplifiers and power amplifiers for audio signal amplification.
  • Switching circuits: Employed in circuits requiring high-speed switching capabilities.
  • General-purpose amplification: Suitable for a wide range of amplification needs in electronic circuits.
  • Driver stages: Can be used to drive larger transistors or other high-current devices.

Features

  • PNP epitaxial planar silicon transistor.
  • High current amplification factor (hFE). The 'Y' suffix indicates a specific hFE range.
  • Low saturation voltage.
  • High collector power dissipation.
  • Excellent high-frequency characteristics.
  • Surface mount package (TE85L,F).

Benefits

  • Provides high gain amplification for audio and other signal types.
  • Enables efficient switching in high-speed circuits.
  • Contributes to low power loss due to its low saturation voltage.
  • Allows for use in a variety of amplifier designs due to its versatility.
  • Simplifies circuit board assembly with its surface mount package.

Technical Specifications (Typical)

  • Collector-Base Voltage (VCBO): -60V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -6V
  • Collector Current (IC): -1A
  • Collector Power Dissipation (PC): 0.9W
  • Current Gain (hFE): Varies depending on the 'Y' ranking but typically between 100 and 300.
  • Operating Junction Temperature: 150°C

The 2SA1162-Y(TE85L,F) offers reliable performance in a compact surface-mount package. Its high gain and low saturation voltage make it a suitable choice for various analog and digital circuit applications where a PNP transistor with these specifications is required. Its application in audio amplification circuits is particularly noteworthy due to its low noise characteristics. The TE85L,F package indicates a specific surface mount configuration that is designed for automated assembly processes, reducing manufacturing costs and increasing production efficiency.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,000+ $0.0502 $50.2000
2,430+ $0.0412 $100.1160
3,760+ $0.0399 $150.0240
5,185+ $0.0386 $200.1410
6,705+ $0.0373 $250.0965
8,960+ $0.0335 $300.1600
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Availability: 170,100 pieces
MOQ: 1000 pcs
Order Increment : 1 pcs
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