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2SA1307-Y

Part No 2SA1307-Y
Manufacturer Toshiba Semiconductor and Storage
Sample
Rohs State Need to verify
ECAD Module
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Reference Date Code 03+
Reference case TO-220F
Manufacturer Toshiba Semiconductor and Storage
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
RoHS State Request Verification
Win Source Part Number 728800-2SA1307-Y
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SA1307-Y CAD Model

Description

The 2SA1307-Y is a PNP silicon epitaxial transistor manufactured by Toshiba Semiconductor and Storage. It is designed for use in audio amplifier applications. It's known for its good linearity and gain characteristics.

Applications:

  • Audio Amplifiers
  • General Purpose Amplification
  • Signal Processing

Features:

  • High Collector-Emitter Voltage
  • High Collector Current
  • Good Linearity

Benefits:

  • Good audio quality in amplifier circuits
  • Can handle relatively high voltage and current levels

Specifications:

The 2SA1307-Y features a Collector-Emitter Voltage (VCEO) of -160V. The Collector Current (IC) is -7A, and the Collector Power Dissipation is 70W. The DC Current Gain (hFE) typically ranges from 100-200. The Y classification represents a specific gain range. It is commonly packaged in a TO-3P package. It is designed to operate between -55°C to +150°C.

The 2SA1307-Y is a suitable component for audio amplification circuits where good linearity and a reasonable power handling capability are required.

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