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2SA1329

Part No 2SA1329
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description PNP Silicon Power Transistor / SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 153547-2SA1329
Popularity Medium
Supply and Demand Status Balance
Family Name 2SA1329
Introduction Date October 22, 2014
Country of Origin United States of America
Estimated EOL Date 2031
Ultra Librarian 3D Model Ultra Librarian 2SA1329 CAD Model

Description

Overview of 2SA1329

The 2SA1329 is a high-performance PNP transistor designed for a variety of applications focusing on low-noise and high-gain amplification. Its compact design makes it a preferred choice for space-constrained projects.

Features and Benefits

  • Low Noise: Ideal for applications requiring minimal signal distortion.
  • High Gain: Excellent for amplification applications where enhanced signal strength is needed.
  • Compact Size: Suitable for integration in small, space-limited electronic projects.

Applications

  • Audio Amplifiers
  • Signal Processing Equipment
  • Switching Circuits

This transistor is a versatile component that can significantly improve the performance and efficiency of various electronic circuits. Its robust design ensures reliability and long-term stability in professional applications.

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