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Same model may have multiple batches, images only for reference.
2SA1962-O(Q) Real Image
Same model may have multiple batches, images only for reference.

2SA1962-O(Q)

Part No 2SA1962-O(Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS PNP 230V 15A TO-3PN
Datasheet
2SA1962-O(Q) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Transistor Polarity PNP
Maximum Current Collector 15A
VCEO Maximum Collector-Emitter Breakdown Voltage 230V
Max Vce (sat) 3V @ 800mA, 8A
Collector Cut-off Current(Max) 5μA (ICBO)
Typical Gain (hFE) (Min) 80 @ 1A, 5V
Maximum Power Dissipation 130W
Frequency - Transition 30MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P(N)
Win Source Part Number 1004199-2SA1962-O(Q)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2SA1962-O(Q) CAD Model

Description

The Toshiba Semiconductor and Storage 2SA1962-O(Q) is a PNP bipolar transistor designed for high-power amplifier applications.

  • Device Type: through-hole
  • Package: TO-3P(N)
  • Maximum Collector Current: 15A
  • Maximum Collector-Emitter Breakdown Voltage: 230V
  • Maximum Collector-Emitter Saturation Voltage (Vce(sat)): 3V @ 800mA and 8A
  • Collector Cut-Off Current (ICBO): 5μA
  • Typical Gain (hFE) (Min): 80 @ 1A and 5V
  • Maximum Power Dissipation: 130W
  • Temperature Range: 150°C (TJ)
  • Popularity: popular
  • Supply and Demand: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $10.6341 $63.8046
14+ $8.7249 $122.1486
21+ $8.4523 $177.4983
29+ $8.1797 $237.2113
37+ $7.9071 $292.5627
49+ $7.0894 $347.3806
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Availability: 28,400 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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