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2SA1987-O(Q)

Name: 2SA1987-O(Q)
Brand: Toshiba Semiconductor and Storage
SKU: 1036631
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	2SA1987-O(Q)
Manufacturer	Toshiba Semiconductor and Storage
Catalog	RF Transistors (BJT)
Description	TRANS PNP 230V 15A TO3P / Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 180 W Through Hole TO-3P(L)
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr	Toshiba Semiconductor and Storage
Package	Bulk
Transistor Type	PNP
Current - Collector (Ic) (Max)	15 A
Voltage - Collector Emitter Breakdown (Max)	230 V
Vce Saturation (Max) @ Ib, Ic	3V @ 800mA, 8A
Current - Collector Cutoff (Max)	5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 1A, 5V
Power - Max	180 W
Frequency - Transition	30MHz
Temperature Range - Operating	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3PL
Supplier Device Package	TO-3P(L)
Base Product Number	2SA1987
MSL Level	Not Applicable
ECCN	EAR99
HTSUS	8541.29.0075
Standard Package	100
Win Source Part Number	1036631-2SA1987-O(Q)
Ultra Librarian 3D Model	Ultra Librarian 2SA1987-O(Q) CAD Model

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Description

The 2SA1987-O(Q) is a PNP bipolar transistor with a maximum power of 180W and a maximum voltage of 230V.

Maximum Power: 180W
Maximum Voltage: 230V
Maximum Collector Current: 15A
Vce Saturation: 3V @ 800mA, 8A
DC Current Gain: 80 @ 1A, 5V
Frequency Transition: 30MHz
Operating Temperature: 150°C
Package: TO-3PL
Category: Discrete semiconductor products
Applications: Used in various applications such as audio amplifiers and power supplies.

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2SA1987-O(Q)

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