The 2SA817A is a PNP silicon epitaxial transistor manufactured by Toshiba Semiconductor and Storage. It is designed for use in various amplifier and switching applications. This transistor is known for its good linearity and low noise characteristics, making it suitable for audio and signal processing circuits.

Applications

• Low-noise amplifier stages
• Audio amplifiers
• Switching circuits
• General-purpose amplification
• Driver stages

Features

• Low noise figure
• High collector current (IC) rating
• High voltage (VCEO) rating
• Good hFE linearity
• Small signal amplifier

Benefits

• Provides clean and clear amplification in audio circuits.
• Handles higher current loads effectively.
• Offers reliable performance in high-voltage applications.
• Ensures stable gain across a wide range of collector currents.
• Suitable for a variety of amplification needs.

Additional Details

The 2SA817A has a collector-emitter voltage (VCEO) of typically -50V, and a collector current (IC) rating that varies but typically ranges around -150mA. The power dissipation (PC) is around 250mW. The hFE (DC current gain) is in the range of 200 to 400, providing substantial amplification. The operating temperature range is typically -55°C to +150°C. It typically comes in a TO-92 package. The low noise figure makes it an excellent choice for sensitive audio amplification circuits.

The 2SA817A transistor is a reliable and versatile component for amplifier and switching applications, offering good performance characteristics and ease of use.