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2SB907

Part No 2SB907
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANSISTOR (SWITCHING, HANNER DRIVE, PULSE MOTOR DRIVE, POWER AMPLIFIER APPLICATIONS)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 154981-2SB907
Popularity Medium
Supply and Demand Status Balance
Family Name 2SB907
Introduction Date June 18, 1999
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SB907 CAD Model

Description

Engineered with precision, the 2SB907 transistor provides excellent performance for RF amplification and switching. Its compact package makes it highly suitable for modern compact electronic devices.

Features and Benefits

  • High Collector Current Capacity: Offers a maximum collector current capacity, ideal for intense applications.
  • Quick Switching: The transistor is capable of rapid state change, essential for high-speed digital circuits.
  • Low Signal Distortion: Maintains signal integrity with minimal distortion, enhancing the fidelity of electronic signals.

Applications

  • Radio Frequency Amplifiers: Used in RF amplifiers, ensuring clear signal propagation.
  • Switching Power Supplies: Ideal for applications requiring quick and efficient power management.
  • Telecommunication Devices: Ensures optimal performance within communication equipment.
  • High-Frequency Circuits: Suitable for circuits operating in the high-frequency range where performance is critical.

The inclusion of the 2SB907 ensures your project's enhanced efficiency and reliability, with significant reductions in energy loss.

Note: Ensure the thermal management system within your device can accommodate the operational constraints of this transistor.

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